JPH0428148B2 - - Google Patents

Info

Publication number
JPH0428148B2
JPH0428148B2 JP59145901A JP14590184A JPH0428148B2 JP H0428148 B2 JPH0428148 B2 JP H0428148B2 JP 59145901 A JP59145901 A JP 59145901A JP 14590184 A JP14590184 A JP 14590184A JP H0428148 B2 JPH0428148 B2 JP H0428148B2
Authority
JP
Japan
Prior art keywords
diffusion
emitter
substrate
transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59145901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6038857A (ja
Inventor
Ekurundo Kurasuuhookan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of JPS6038857A publication Critical patent/JPS6038857A/ja
Publication of JPH0428148B2 publication Critical patent/JPH0428148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/461—Inverted vertical BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP59145901A 1983-07-15 1984-07-13 多重トランジスタ Granted JPS6038857A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8304013A SE433787B (sv) 1983-07-15 1983-07-15 Multipel transistor med gemensam emitter och sparata kollektorer
SE8304013-9 1983-07-15

Publications (2)

Publication Number Publication Date
JPS6038857A JPS6038857A (ja) 1985-02-28
JPH0428148B2 true JPH0428148B2 (en]) 1992-05-13

Family

ID=20351991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59145901A Granted JPS6038857A (ja) 1983-07-15 1984-07-13 多重トランジスタ

Country Status (4)

Country Link
EP (1) EP0132240B1 (en])
JP (1) JPS6038857A (en])
DE (1) DE3464441D1 (en])
SE (1) SE433787B (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845869B2 (ja) * 1985-03-25 1999-01-13 株式会社日立製作所 半導体集積回路装置
DE10139515C2 (de) 2001-08-10 2003-07-31 Infineon Technologies Ag Bandabstandsschaltung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
US3865648A (en) * 1972-01-07 1975-02-11 Ibm Method of making a common emitter transistor integrated circuit structure
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung
CA1056513A (en) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Integrated logic circuit and method of fabrication
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4228448A (en) * 1977-10-07 1980-10-14 Burr Brown Research Corp. Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor
FR2482368A1 (fr) * 1980-05-12 1981-11-13 Thomson Csf Operateur logique a injection par le substrat et son procede de fabrication

Also Published As

Publication number Publication date
EP0132240B1 (en) 1987-06-24
DE3464441D1 (en) 1987-07-30
EP0132240A1 (en) 1985-01-23
JPS6038857A (ja) 1985-02-28
SE433787B (sv) 1984-06-12
SE8304013D0 (sv) 1983-07-15

Similar Documents

Publication Publication Date Title
US6590273B2 (en) Semiconductor integrated circuit device and manufacturing method thereof
KR100208632B1 (ko) 반도체 집적 회로 및 그 제조 방법
JPH07297373A (ja) 誘導性負荷要素に対する集積ドライバ回路装置
US4564855A (en) High current PNP transistor forming part of an integrated monolithic circuit
JPH06104459A (ja) 半導体装置
JP4460272B2 (ja) パワートランジスタおよびそれを用いた半導体集積回路
JPH0428148B2 (en])
US4097888A (en) High density collector-up structure
JP3883681B2 (ja) 半導体集積回路
JPH0440272Y2 (en])
JPH11186283A (ja) 半導体装置
JP3343892B2 (ja) 半導体集積回路
JPS63128742A (ja) 半導体注入集積論理回路装置
JPH0442828B2 (en])
JPH0629374A (ja) 半導体集積回路装置
JPS6348189B2 (en])
JPS63128741A (ja) 半導体注入集積論理回路装置
JP2518880B2 (ja) 半導体装置
JPH0525233Y2 (en])
JPH0474478A (ja) ダイオード
JPS6347965A (ja) 半導体集積回路
JPS61150383A (ja) 半導体装置
JPS60776B2 (ja) 半導体装置
JPS59168663A (ja) 半導体集積回路
JPS63128743A (ja) 半導体注入集積論理回路装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees